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Samsung M393B4G70EMB-CK0 32GB
Crucial Technology BL16G26C16U4R.16FE 16GB

Samsung M393B4G70EMB-CK0 32GB vs Crucial Technology BL16G26C16U4R.16FE 16GB

总分
star star star star star
Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

总分
star star star star star
Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

差异 规格 评论

差异

Samsung M393B4G70EMB-CK0 32GB 需要考虑的原因
Samsung M393B4G70EMB-CK0 32GB
报告一个错误
Crucial Technology BL16G26C16U4R.16FE 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 66
    左右 -128% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 7.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B4G70EMB-CK0 32GB
Crucial Technology BL16G26C16U4R.16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 29
  • 读取速度，GB/s
    7.3 left arrow 17.1
  • 写入速度，GB/s
    6.6 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1760 left arrow 3384

Samsung M393B4G70EMB-CK0 32GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Crucial Technology BL16G26C16U4R.16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston 9905701-032.A00G 16GB
Kingston 9905701-032.A00G 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4C3333C16 8GB
Corsair CMK32GX4M4C3333C16 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK32GX4M2L3000C15 16GB
Corsair CMK32GX4M2L3000C15 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Kingston KHX2666C15S4/16G 16GB
Kingston KHX2666C15S4/16G 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9965600-027.A00G 16GB
Kingston 9965600-027.A00G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Kingston 99U5471-012.A00 4GB
Kingston 99U5471-012.A00 4GB
Kingston 99U5471-006.A00LF 4GB
Kingston 99U5471-006.A00LF 4GB
内存RAM