Samsung M393B4G70EMB-CK0 32GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

总分

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

总分

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

差异规格评论

差异

Samsung M393B4G70EMB-CK0 32GB

需要考虑的原因
Samsung M393B4G70EMB-CK0 32GB

报告一个错误

Memphis Electronic D4SO1G724GI-A58SD 8GB

需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 66

左右 -120% 更低的延时
更快的读取速度，GB/s

11.7 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B4G70EMB-CK0 32GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

66 30
读取速度，GB/s

7.3 11.7
写入速度，GB/s

6.6 6.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1760 1832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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G Skill Intl F3-1333C9-4GIS 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CM4X8GF2400Z16K4 8GB

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A-DATA Technology DQKD1A08 1GB

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Corsair CMN32GX4M2Z3200C16 16GB

Corsair CMN32GX4M2Z3200C16 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

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