Samsung M393B5170EH1-CH9 4GB vs Corsair CMD64GX4M8A2800C16 8GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

Corsair CMD64GX4M8A2800C16 8GB

Corsair CMD64GX4M8A2800C16 8GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

Corsair CMD64GX4M8A2800C16 8GB

需要考虑的原因
Corsair CMD64GX4M8A2800C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更快的读取速度，GB/s

12.8 10.2

测试中的平均数值
更快的写入速度，GB/s

10.6 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

Corsair CMD64GX4M8A2800C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

10.2 12.8
写入速度，GB/s

7.6 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2049 2817

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR26N19D8/16 16GB

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Kingston 99U5458-008.A00LF 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 99U5700-014.A00G 8GB

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Corsair CMX4GX3M1A1333C9 4GB

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