Samsung M393B5170EH1-CH9 4GB vs Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 51

左右 -168% 更低的延时
更快的读取速度，GB/s

19.2 10.2

测试中的平均数值
更快的写入速度，GB/s

15.5 7.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 19
读取速度，GB/s

10.2 19.2
写入速度，GB/s

7.6 15.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2049 3336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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