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Samsung M393B5170FH0-CH9 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB

Samsung M393B5170FH0-CH9 4GB vs A-DATA Technology AM1P26KC8T1-BAAS 8GB

总分
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分
star star star star star
A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CH9 4GB 需要考虑的原因
Samsung M393B5170FH0-CH9 4GB
报告一个错误
A-DATA Technology AM1P26KC8T1-BAAS 8GB 需要考虑的原因
A-DATA Technology AM1P26KC8T1-BAAS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 49
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CH9 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 45
  • 读取速度，GB/s
    10.0 left arrow 15.0
  • 写入速度，GB/s
    8.2 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2116 left arrow 2190

Samsung M393B5170FH0-CH9 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B5170FH0-CH9 4GB
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A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M471B5273DH0-CK0 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
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内存RAM