Samsung M393B5170FH0-CH9 4GB vs Crucial Technology CT8G4SFD8213.C16FDD2 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 49

左右 -58% 更低的延时
更快的读取速度，GB/s

15.3 10

测试中的平均数值
更快的写入速度，GB/s

12.1 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 31
读取速度，GB/s

10.0 15.3
写入速度，GB/s

8.2 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 2539

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMU32GX4M2C3200C16 16GB

Corsair CMU32GX4M2C3200C16 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ32GX3M4X1600C10 8GB

Corsair CMZ32GX3M4X1600C10 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Kingston HP32D4U8S8ME-8XR 8GB

Kingston HP32D4U8S8ME-8XR 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB