Samsung M393B5170FH0-CH9 4GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 49

左右 -48% 更低的延时
更快的读取速度，GB/s

19.4 10

测试中的平均数值
更快的写入速度，GB/s

15.7 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 33
读取速度，GB/s

10.0 19.4
写入速度，GB/s

8.2 15.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2116 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Corsair CMV4GX4M1A2400C16 4GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

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Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

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Avant Technology W6451U67J5213NB 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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INTENSO M418039 8GB

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Kingston 99U5702-020.A00G 8GB