Samsung M393B5170FH0-CK0 4GB vs Asgard VMA41UH-MEC1U2AW1 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时
更快的写入速度，GB/s

7.3 6.8

测试中的平均数值

Asgard VMA41UH-MEC1U2AW1 16GB

需要考虑的原因
Asgard VMA41UH-MEC1U2AW1 16GB

报告一个错误

更快的读取速度，GB/s

13.7 11.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Asgard VMA41UH-MEC1U2AW1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.8 13.7
写入速度，GB/s

7.3 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FAD1 4GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3000C14-8GTZ 8GB

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Kingston 99U5429-007.A00LF 2GB

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Kingston 9905403-061.A00LF 2GB

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Kingston 99U5474-022.A00LF 2GB

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Team Group Inc. TEAMGROUP-D4-3733 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

SK Hynix HMT41GS6MFR8A-PB 8GB

SK Hynix HMT41GS6MFR8A-PB 8GB

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Kingston HP669238-071-HYC 4GB

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Kingston HP24D4U7S8MH-8 8GB