Samsung M393B5170FH0-CK0 4GB vs Corsair CMK64GX4M2D3000C16 32GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMK64GX4M2D3000C16 32GB

Corsair CMK64GX4M2D3000C16 32GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Corsair CMK64GX4M2D3000C16 32GB

需要考虑的原因
Corsair CMK64GX4M2D3000C16 32GB

报告一个错误

更快的读取速度，GB/s

17.1 11.8

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMK64GX4M2D3000C16 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 17.1
写入速度，GB/s

7.3 13.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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Corsair CMK64GX4M2D3000C16 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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Kingston KVR533D2N4 512MB

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Kingston KVR16N11/8-SP 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Kingston KHX2666C15/8G 8GB

Kingston KHX2666C15/8G 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB