Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BL16G32C16U4W.16FE 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Crucial Technology BL16G32C16U4W.16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4W.16FE 16GB

报告一个错误

更快的读取速度，GB/s

20 11.8

测试中的平均数值
更快的写入速度，GB/s

15.4 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BL16G32C16U4W.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

11.8 20.0
写入速度，GB/s

7.3 15.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 3592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston XRGM6C-MIB 16GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Corsair CMK8GX4M1A2666C16 8GB

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Essencore Limited KD48GU880-32A160T 8GB

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Kingston 99U5469-045.A00LF 4GB

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Nanya Technology NT8GA64D88CX3S-JR 8GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Hewlett-Packard 7EH67AA# 8GB

Hewlett-Packard 7EH67AA# 8GB