Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BL32G32C16U4W.M16FB1 32GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BL32G32C16U4W.M16FB1 32GB

Crucial Technology BL32G32C16U4W.M16FB1 32GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Crucial Technology BL32G32C16U4W.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16U4W.M16FB1 32GB

报告一个错误

更快的读取速度，GB/s

17.9 11.8

测试中的平均数值
更快的写入速度，GB/s

16.0 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BL32G32C16U4W.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 17.9
写入速度，GB/s

7.3 16.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 3795

RAM Latency Calculator

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Micron Technology TEAMGROUP-UD4-3000 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB