Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

报告一个错误

更快的读取速度，GB/s

15.7 11.8

测试中的平均数值
更快的写入速度，GB/s

11.9 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

11.8 15.7
写入速度，GB/s

7.3 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CM2X1024-6400C4 1GB

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SK Hynix HMA851U6CJR6N-VK 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB

Samsung M471B5673FH0-CF8 2GB

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Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB