Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4SFD8266.C16FD1 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Crucial Technology CT16G4SFD8266.C16FD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FD1 16GB

报告一个错误

更快的读取速度，GB/s

15.9 11.8

测试中的平均数值
更快的写入速度，GB/s

12.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

11.8 15.9
写入速度，GB/s

7.3 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1G70QH0-YK0 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Ramaxel Technology RMUA5200ME78HAF-3200 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CM4X8GD3200C16K2E 8GB

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Kingston 9905471-001.A01LF 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB