Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3000C16-8GTRG 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

G Skill Intl F4-3000C16-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

19.4 11.8

测试中的平均数值
更快的写入速度，GB/s

15.4 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3000C16-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

11.8 19.4
写入速度，GB/s

7.3 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ40EG8BFWB-JS-F 4GB

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A-DATA Technology DDR3 1600 4GB

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Corsair CMSX32GX4M2A3000C18 16GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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Kingston HP32D4U8D8HC-16X 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9965525-018.A00LF 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB