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Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
比较
Samsung M393B5170FH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M393B5170FH0-CK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更快的读取速度,GB/s
16
11.8
测试中的平均数值
更快的写入速度,GB/s
12.5
7.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
11.8
16.0
写入速度,GB/s
7.3
12.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2057
2925
Samsung M393B5170FH0-CK0 4GB RAM的比较
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW16GX4M2C3000C15 8GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 99U5663-006.A00G 16GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMU32GX4M2A2400C14 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston KHX3466C16D4/16GX 16GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CM4X4GF2133C13K4 4GB
Samsung M393B1K70CH0-YH9 8GB
EVGA 8GX-D4-3200-MR 8GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905744-006.A00G 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-8GTZRF 8GB
A-DATA Technology DQVE1908 512MB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
报告一个错误
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Bug description
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