Samsung M393B5170FH0-CK0 4GB vs Kingston 9905622-025.A00G 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Kingston 9905622-025.A00G 4GB

Kingston 9905622-025.A00G 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Kingston 9905622-025.A00G 4GB

需要考虑的原因
Kingston 9905622-025.A00G 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.8

测试中的平均数值
更快的写入速度，GB/s

9.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Kingston 9905622-025.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 12.3
写入速度，GB/s

7.3 9.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2339

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4R8GL24A8R 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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SK Hynix HMA82GS6DJR8N-XN 16GB

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Samsung M471A2K43CB1-CTD 16GB

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Shenzhen Xingmem Technology Corp 16GB

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Kllisre M378A5143EB2-CRC 4GB

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Crucial Technology CT8G4DFD824A.C16FBR2 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CMW128GX4M4E3200C16 32GB

Corsair CMW128GX4M4E3200C16 32GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

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