Samsung M393B5170FH0-CK0 4GB vs Micron Technology 16ATF2G64AZ-2G1A1 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Micron Technology 16ATF2G64AZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G1A1 16GB

报告一个错误

更快的读取速度，GB/s

14.9 11.8

测试中的平均数值
更快的写入速度，GB/s

10.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

11.8 14.9
写入速度，GB/s

7.3 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG32GX4M2E3200C16 16GB

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Corsair CMT64GX4M4K3600C16 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Corsair CMK64GX4M2C3200C16 32GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Lexar Co Limited LD4AS016G-H2666G 16GB

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Corsair CMW32GX4M2Z3200C16 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 16ATF4G64HZ-3G2E2 32GB

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Samsung M3 78T5663EH3-CF7 2GB

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Kingston 9965640-016.A00G 32GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB