Samsung M393B5170FH0-CK0 4GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Micron Technology 4ATF51264HZ-2G3E2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E2 4GB

报告一个错误

更快的读取速度，GB/s

15.8 11.8

测试中的平均数值
更快的写入速度，GB/s

12.2 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 15.8
写入速度，GB/s

7.3 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C14-16GTZN 16GB

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Kingston KHX1866C9D3/8GX 8GB

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Kingston 9965516-112.A00LF 16GB

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Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

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Crucial Technology CT16G4SFD824A.M16FJ 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CM4X4GF2666C16K4 4GB

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Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB