Samsung M393B5170FH0-CK0 4GB vs Panram International Corporation PUD42400C154G4NJK 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Panram International Corporation PUD42400C154G4NJK 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G4NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

18.4 11.8

测试中的平均数值
更快的写入速度，GB/s

12.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

11.8 18.4
写入速度，GB/s

7.3 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2980

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-437.A01LF 4GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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G Skill Intl F4-2666C15-8GVB 8GB