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Samsung M393B5170FH0-CK0 4GB
Samsung M386A2G40DB0-CPB 16GB

Samsung M393B5170FH0-CK0 4GB vs Samsung M386A2G40DB0-CPB 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    11.8 left arrow 10
    测试中的平均数值
Samsung M386A2G40DB0-CPB 16GB 需要考虑的原因
Samsung M386A2G40DB0-CPB 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Samsung M386A2G40DB0-CPB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 45
  • 读取速度，GB/s
    11.8 left arrow 10.0
  • 写入速度，GB/s
    7.3 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2414

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Samsung M386A2G40DB0-CPB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology D12.2324CS.001 8GB
Apacer Technology D12.2324CS.001 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CM4X8GE2133C13K4 8GB
Corsair CM4X8GE2133C13K4 8GB
内存RAM
Samsung M471B5773EB0-CK0 2GB
Samsung M471B5773EB0-CK0 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMU64GX4M4C3200C16 16GB
Corsair CMU64GX4M4C3200C16 16GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M2D3000C16 16GB
Corsair CMK32GX4M2D3000C16 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2133C15-4GNT 4GB
G Skill Intl F4-2133C15-4GNT 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM