Samsung M393B5170FH0-CK0 4GB vs SK Hynix HMA425S6AFR6N-UH 2GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 86

左右 69% 更低的延时
更快的写入速度，GB/s

7.3 6.3

测试中的平均数值

SK Hynix HMA425S6AFR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6AFR6N-UH 2GB

报告一个错误

更快的读取速度，GB/s

13.5 11.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

SK Hynix HMA425S6AFR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 86
读取速度，GB/s

11.8 13.5
写入速度，GB/s

7.3 6.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 1469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Corsair CMK32GX4M4C3333C16 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Samsung M3 78T5663EH3-CF7 2GB

Kingston 9905630-033.A00G 16GB

Kingston 9905630-033.A00G 16GB