Samsung M393B5170FH0-CK0 4GB vs SK Hynix HMA82GU6DJR8N-XN 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

SK Hynix HMA82GU6DJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GU6DJR8N-XN 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.8

测试中的平均数值
更快的写入速度，GB/s

13.2 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

SK Hynix HMA82GU6DJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

11.8 15.7
写入速度，GB/s

7.3 13.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2057 3247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264AC800.C16FC 4GB

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Micron Technology M471A1K43CB1-CTD 8GB

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Samsung M391A2K43BB1-CTD 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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G Skill Intl F4-3000C16-8GTZN 8GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT4G4DFS8266.C8FE 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Essencore Limited IM4AGS88N26-GIIHA0 16GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Kingston KHX8500D2K2/2GN 1GB

Kingston KHX8500D2K2/2GN 1GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB