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Samsung M393B5270CH0-CH9 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB

Samsung M393B5270CH0-CH9 4GB vs Hyundai Inc AR32C16S8K2SU416R 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Hyundai Inc AR32C16S8K2SU416R 8GB 需要考虑的原因
Hyundai Inc AR32C16S8K2SU416R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 42
    左右 -110% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 20
  • 读取速度，GB/s
    10.6 left arrow 19.4
  • 写入速度，GB/s
    9.0 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3395

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Hyundai Inc AR32C16S8K2SU416R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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V-GEN D4H8GL32A8TS 8GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Crucial Technology BL8G32C16S4B.8FE 8GB
Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM