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Samsung M395T2863QZ4-CF76 1GB
Corsair CM4X16GC3200C16K4 16GB

Samsung M395T2863QZ4-CF76 1GB vs Corsair CM4X16GC3200C16K4 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Corsair CM4X16GC3200C16K4 16GB

Corsair CM4X16GC3200C16K4 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 14.6
    测试中的平均数值
Corsair CM4X16GC3200C16K4 16GB 需要考虑的原因
Corsair CM4X16GC3200C16K4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 104
    左右 -247% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4X16GC3200C16K4 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 30
  • 读取速度，GB/s
    3,192.0 left arrow 17.2
  • 写入速度，GB/s
    2,404.5 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3592

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Corsair CM4X16GC3200C16K4 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
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Protocol Engines Kingrock 800 2GB 2GB
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Kingston 9905665-020.A00G 4GB
内存RAM
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A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
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Ramaxel Technology RMT3170EB68F9W1600 4GB
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A-DATA Technology DDR4 2800 2OZ 4GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMK16GX4M2A2133C13 8GB
Corsair CMK16GX4M2A2133C13 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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Kingston 99U5701-049.A00G 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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G Skill Intl F4-4800C19-8GTESC 8GB
内存RAM