Samsung M395T2863QZ4-CF76 1GB vs Corsair CMK16GX4M2F4400C19 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 21.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 17.8

测试中的平均数值

Corsair CMK16GX4M2F4400C19 8GB

需要考虑的原因
Corsair CMK16GX4M2F4400C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 104

左右 -550% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Corsair CMK16GX4M2F4400C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 16
读取速度，GB/s

3,192.0 21.7
写入速度，GB/s

2,404.5 17.8
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M8C3000C15 8GB

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Crucial Technology CT102464BA1339.M16 8GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Ramaxel Technology RMSA3230KB78HAF2133 8GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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G Skill Intl F4-3333C16-16GTZB 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB