Samsung M395T2863QZ4-CF76 1GB vs Corsair CMR16GX4M2Z3200C16 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 14.7

测试中的平均数值

Corsair CMR16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 104

左右 -373% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Corsair CMR16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 22
读取速度，GB/s

3,192.0 18.7
写入速度，GB/s

2,404.5 14.7
内存带宽，mbps

6400 21300

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

786 3291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9905403-090.A01LF 4GB

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Patriot Memory (PDP Systems) 2400 C17 8GB

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A-DATA Technology AM1P24HC8T1-BBJS 8GB

A-DATA Technology AM1P24HC8T1-BBJS 8GB