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Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.16FE 16GB

Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BL16G32C16U4W.16FE 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 15.4
    测试中的平均数值
Crucial Technology BL16G32C16U4W.16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4W.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 104
    左右 -225% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 32
  • 读取速度，GB/s
    3,192.0 left arrow 20.0
  • 写入速度，GB/s
    2,404.5 left arrow 15.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3592

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Crucial Technology BL16G32C16U4W.16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905712-034.A00G 16GB
Kingston 9905712-034.A00G 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
V-Color Technology Inc. TC416G24D817 16GB
V-Color Technology Inc. TC416G24D817 16GB
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SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-4400C16-8GVK 8GB
G Skill Intl F4-4400C16-8GVK 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW8GX4M1Z3600C18 8GB
Corsair CMW8GX4M1Z3600C18 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMD8GX4M2B3466C18 4GB
Corsair CMD8GX4M2B3466C18 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM