Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLS4G4D240FSA.8FBD 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值
更快的写入速度，GB/s

2,404.5 12.4

测试中的平均数值

Crucial Technology BLS4G4D240FSA.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 104

左右 -352% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 23
读取速度，GB/s

3,192.0 16.6
写入速度，GB/s

2,404.5 12.4
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK32GX4M2K3600C16 16GB

Corsair CMK32GX4M2K3600C16 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB