RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
11.7
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
报告一个错误
低于PassMark测试中的延时,ns
41
104
左右 -154% 更低的延时
更快的写入速度,GB/s
9.5
2,404.5
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
41
读取速度,GB/s
3,192.0
11.7
写入速度,GB/s
2,404.5
9.5
内存带宽,mbps
6400
19200
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
786
2058
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix HMT41GS6AFR8A-PB 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Kingston 9965525-155.A00LF 8GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M4A2800C16 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G32C16S4B.16FE 16GB
Kingston 99U5474-013.A00LF 2GB
Gloway International (HK) STK4U2400D17082C 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3866C18-4GTZ 4GB
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M471A2K43DB1-CWE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
A-DATA Technology DQKD1A08 1GB
Transcend Information TS2GLH64V6B 16GB
Crucial Technology CT102464BF160B.16F 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
报告一个错误
×
Bug description
Source link