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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-4GRK 4GB

Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-2400C15-4GRK 4GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 10.7
    测试中的平均数值
G Skill Intl F4-2400C15-4GRK 4GB 需要考虑的原因
G Skill Intl F4-2400C15-4GRK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 104
    左右 -167% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-4GRK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 39
  • 读取速度，GB/s
    3,192.0 left arrow 13.2
  • 写入速度，GB/s
    2,404.5 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2651

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

G Skill Intl F4-2400C15-4GRK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston LV32D4U2S8ME-16X 16GB
Kingston LV32D4U2S8ME-16X 16GB
内存RAM
Corsair CMZ16GX3M2A2133C10 8GB
Corsair CMZ16GX3M2A2133C10 8GB
Corsair CMK32GX5M2A4800C40 16GB
Corsair CMK32GX5M2A4800C40 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GVK 8GB
G Skill Intl F4-3600C17-8GVK 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM