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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C18-32GRS 32GB
比较
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-2666C18-32GRS 32GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
G Skill Intl F4-2666C18-32GRS 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
15.2
测试中的平均数值
更快的写入速度,GB/s
2,404.5
13.3
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2666C18-32GRS 32GB
报告一个错误
低于PassMark测试中的延时,ns
39
104
左右 -167% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C18-32GRS 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
39
读取速度,GB/s
3,192.0
15.2
写入速度,GB/s
2,404.5
13.3
内存带宽,mbps
6400
21300
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
786
3027
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-2666C18-32GRS 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965589-017.D00G 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C18-32GRS 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Kingston 9905584-016.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Kingston 99U5474-022.A00LF 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3800C14-16GTZN 16GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Kingston 9905663-005.A00G 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-4000C17-8GTRS 8GB
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
报告一个错误
×
Bug description
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