Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3000C15-8GVKB 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 18.3

测试中的平均数值
更快的写入速度，GB/s

2,404.5 14.0

测试中的平均数值

G Skill Intl F4-3000C15-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 104

左右 -271% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3000C15-8GVKB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 28
读取速度，GB/s

3,192.0 18.3
写入速度，GB/s

2,404.5 14.0
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Vulcan-1600 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMD32GX4M4A2400C12 8GB

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Kingston 9965433-034.A00LF 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9965596-029.B00G 4GB