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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB

Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3600C17-16GTZSW 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3600C17-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 104
    左右 -285% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 27
  • 读取速度，GB/s
    3,192.0 left arrow 18.3
  • 写入速度，GB/s
    2,404.5 left arrow 17.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3956

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

G Skill Intl F4-3600C17-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA42GR7AFR4N-UH 16GB
SK Hynix HMA42GR7AFR4N-UH 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston 9965604-008.C00G 8GB
Kingston 9965604-008.C00G 8GB
内存RAM
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMD16GX4M4A2666C15 4GB
Corsair CMD16GX4M4A2666C15 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CM4X16GE2400C14K4 16GB
Corsair CM4X16GE2400C14K4 16GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905734-022.A00G 16GB
Kingston 9905734-022.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM