Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3600C17-4GVK 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.5

测试中的平均数值

G Skill Intl F4-3600C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 104

左右 -206% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C17-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 34
读取速度，GB/s

3,192.0 14.8
写入速度，GB/s

2,404.5 11.5
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Kingston 9965516-112.A00LF 16GB

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Crucial Technology CT8G4DFD824A.M16FB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-3200C15-16GVK 16GB