Samsung M395T2863QZ4-CF76 1GB vs Golden Empire CL14-16-16 D4-3000 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 13.1

测试中的平均数值

Golden Empire CL14-16-16 D4-3000 4GB

需要考虑的原因
Golden Empire CL14-16-16 D4-3000 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 104

左右 -395% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Golden Empire CL14-16-16 D4-3000 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 21
读取速度，GB/s

3,192.0 17.7
写入速度，GB/s

2,404.5 13.1
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Hewlett-Packard 7EH74AA#ABC 8GB

Hewlett-Packard 7EH74AA#ABC 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Patriot Memory (PDP Systems) PSD48G213381 8GB