Samsung M395T2863QZ4-CF76 1GB vs Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

需要考虑的原因
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

报告一个错误

低于PassMark测试中的延时，ns

67 104

左右 -55% 更低的延时
更快的写入速度，GB/s

7.4 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 67
读取速度，GB/s

3,192.0 14.4
写入速度，GB/s

2,404.5 7.4
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 1693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD64GX4M4C3200C16 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Chun Well Technology Holding Limited D4U0832160B 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Kingston 9905744-066.A00G 32GB

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