Samsung M395T2863QZ4-CF76 1GB vs Kingston 9965669-025.A00G 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingston 9965669-025.A00G 8GB

Kingston 9965669-025.A00G 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值

Kingston 9965669-025.A00G 8GB

需要考虑的原因
Kingston 9965669-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 104

左右 -352% 更低的延时
更快的写入速度，GB/s

9.5 2,404.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingston 9965669-025.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 23
读取速度，GB/s

3,192.0 15.8
写入速度，GB/s

2,404.5 9.5
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2639

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-3200C16-16GTZN 16GB

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Samsung M378A1G44BB0-CWE 8GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 99U5471-012.A00LF 4GB

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Corsair CMK32GX4M2C3333C16 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston K531R8-MIN 4GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Apacer Technology GD2.1129WH.001 16GB

Apacer Technology GD2.1129WH.001 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905712-008.A00G 16GB

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G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB