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Samsung M395T2863QZ4-CF76 1GB
Kingston X2YH1K-MIE 16GB

Samsung M395T2863QZ4-CF76 1GB vs Kingston X2YH1K-MIE 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.6
    测试中的平均数值
Kingston X2YH1K-MIE 16GB 需要考虑的原因
Kingston X2YH1K-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 104
    左右 -160% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 2,404.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Kingston X2YH1K-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 40
  • 读取速度，GB/s
    3,192.0 left arrow 16.6
  • 写入速度，GB/s
    2,404.5 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2875

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Kingston X2YH1K-MIE 16GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C18-16GTRG 16GB
G Skill Intl F4-4000C18-16GTRG 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
Kingston KHX2933C17D4/16G 16GB
Kingston KHX2933C17D4/16G 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Kingston KF3000C15D4/8GX 8GB
Kingston KF3000C15D4/8GX 8GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM