RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 16ATF4G64HZ-3G2B2 32GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Micron Technology 16ATF4G64HZ-3G2B2 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
15.7
测试中的平均数值
更快的写入速度,GB/s
2,404.5
13.7
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2B2 32GB
报告一个错误
低于PassMark测试中的延时,ns
32
104
左右 -225% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
32
读取速度,GB/s
3,192.0
15.7
写入速度,GB/s
2,404.5
13.7
内存带宽,mbps
6400
25600
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
786
3322
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-071.A00LF 8GB
Kingston 9905744-062.A00G 32GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-8GTZRN 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M391A1K43BB2-CTD 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2666C15-8GRKB 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLB-8G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Heoriady HX2666CX15D4/4G 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-4400C19-8GTZKK 8GB
Kingston K1N7HK-ELC 2GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Kingston KP4T2F-PSB 4GB
Corsair CMW16GX4M2C3466C16 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
报告一个错误
×
Bug description
Source link