Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.9

测试中的平均数值

Micron Technology 16ATF4G64HZ-3G2E2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB

报告一个错误

低于PassMark测试中的延时，ns

43 104

左右 -142% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 43
读取速度，GB/s

3,192.0 15.5
写入速度，GB/s

2,404.5 11.9
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2864

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-4133C17-8GTZR 8GB

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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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Kingston 99U5428-040.A00LF 4GB

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G Skill Intl F4-3200C14-16GTZKY 16GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

Kingston 9905469-143.A00LF 4GB

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Kingston SMD4-S8G48HJ-26V 8GB

Kingston SMD4-S8G48HJ-26V 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB