Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8ATF2G64HZ-3G2B2 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2B2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2B2 16GB

报告一个错误

低于PassMark测试中的延时，ns

46 104

左右 -126% 更低的延时
更快的写入速度，GB/s

9.8 2,404.5

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 46
读取速度，GB/s

3,192.0 15.9
写入速度，GB/s

2,404.5 9.8
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-3600C16-32GVK 32GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Crucial Technology CT4G4DFS8213.C8FBD1 4GB

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Corsair CMD32GX4M4C3466C16W 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kreton Corporation 51621xxxx68x35xxxx 2GB

Kreton Corporation 51621xxxx68x35xxxx 2GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB