Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1AY 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1AY 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 104

左右 -271% 更低的延时
更快的写入速度，GB/s

8.7 2,404.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 28
读取速度，GB/s

3,192.0 13.8
写入速度，GB/s

2,404.5 8.7
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GMM.BAC0B 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-4000C19-16GTZKK 16GB

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Corsair CMT64GX4M4K3600C18 16GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Kingston KKRVFX-MIE 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

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Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB