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Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation M424051 4GB

Samsung M395T2863QZ4-CF76 1GB vs Panram International Corporation M424051 4GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 11.2
    测试中的平均数值
Panram International Corporation M424051 4GB 需要考虑的原因
Panram International Corporation M424051 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    97 left arrow 104
    左右 -7% 更低的延时
  • 更快的写入速度，GB/s
    5.5 left arrow 2,404.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation M424051 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 97
  • 读取速度，GB/s
    3,192.0 left arrow 11.2
  • 写入速度，GB/s
    2,404.5 left arrow 5.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    786 left arrow 1270

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Panram International Corporation M424051 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
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Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
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Corsair CMK32GX4M4A2133C13 8GB
内存RAM
Kingston KHX2666C16/8G 8GB
Kingston KHX2666C16/8G 8GB
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内存RAM