Samsung M395T2863QZ4-CF76 1GB vs Panram International Corporation PUD42400C154G2NJW 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 10.2

测试中的平均数值

Panram International Corporation PUD42400C154G2NJW 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G2NJW 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 104

左右 -300% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Panram International Corporation PUD42400C154G2NJW 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 26
读取速度，GB/s

3,192.0 13.7
写入速度，GB/s

2,404.5 10.2
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2594

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M323R2GA3BB0-CQKOD 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB