Samsung M395T2863QZ4-CF76 1GB vs Samsung M393A2G40DB1-CRC 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

Samsung M393A2G40DB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

81 104

左右 -28% 更低的延时
更快的读取速度，GB/s

8.5 3

测试中的平均数值
更快的写入速度，GB/s

5.6 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Samsung M393A2G40DB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 81
读取速度，GB/s

3,192.0 8.5
写入速度，GB/s

2,404.5 5.6
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 1651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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AMD R538G1601U2S-UO 8GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

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AMD R5316G1609U2K 8GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3000C14-8GVK 8GB