Samsung M395T2863QZ4-CF76 1GB vs Smart Modular SF4641G8CKHI6DFSEG 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值
更快的写入速度，GB/s

2,404.5 13.2

测试中的平均数值

Smart Modular SF4641G8CKHI6DFSEG 8GB

需要考虑的原因
Smart Modular SF4641G8CKHI6DFSEG 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 104

左右 -225% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 32
读取速度，GB/s

3,192.0 16.9
写入速度，GB/s

2,404.5 13.2
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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G Skill Intl F4-3200C16-8GVKB 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-2400C15-8GRB 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

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