Samsung M395T2863QZ4-CF76 1GB vs Teclast TLD416G26A30 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值
更快的写入速度，GB/s

2,404.5 13.1

测试中的平均数值

Teclast TLD416G26A30 16GB

需要考虑的原因
Teclast TLD416G26A30 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 104

左右 -189% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Teclast TLD416G26A30 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 36
读取速度，GB/s

3,192.0 15.9
写入速度，GB/s

2,404.5 13.1
内存带宽，mbps

6400 21300

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

786 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5270CH0-CH9 4GB

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Apacer Technology 75.A73AA.G03 2GB

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Corsair CMK64GX4M2Z4000C18 32GB

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AMD R5S38G1601U2S 8GB

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Corsair CMSX4GX4M1A2400C16 4GB

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Kingston 9905403-444.A00LF 4GB

Crucial Technology BLS8G4D240FSB.16FAR 8GB

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Kingston 99U5471-012.A00LF 4GB

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Corsair CMK64GX4M2D3600C18 32GB

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Kingston 9905469-153.A00LF 4GB

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Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB