Samsung M395T5750EZ4-CE66 2GB vs Samsung M395T5750CZ4-CE61 2GB

总分

Samsung M395T5750EZ4-CE66 2GB

Samsung M395T5750EZ4-CE66 2GB

总分

Samsung M395T5750CZ4-CE61 2GB

Samsung M395T5750CZ4-CE61 2GB

差异规格评论

差异

Samsung M395T5750EZ4-CE66 2GB

需要考虑的原因
Samsung M395T5750EZ4-CE66 2GB

报告一个错误

低于PassMark测试中的延时，ns

91 105

左右 13% 更低的延时
更快的读取速度，GB/s

3 2

测试中的平均数值

Samsung M395T5750CZ4-CE61 2GB

需要考虑的原因
Samsung M395T5750CZ4-CE61 2GB

报告一个错误

更快的写入速度，GB/s

1,993.8 1,964.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M395T5750EZ4-CE66 2GB

Samsung M395T5750CZ4-CE61 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

91 105
读取速度，GB/s

3,032.3 2,945.3
写入速度，GB/s

1,964.2 1,993.8
内存带宽，mbps

5300 5300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
时序/时钟速度

no data no data
排名PassMark (越多越好)

682 667

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851U6CJR6N-UH 4GB

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G Skill Intl F4-3200C15-16GVR 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CM4X8GF2400Z16K4 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMU32GX4M2C3333C16 16GB

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Kingston 9905625-139.A00G 16GB

Kingston 9905625-139.A00G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Corsair CMD16GX4M4B3000C15 4GB

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Samsung M393A4K40BB2-CTD 32GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB