Samsung M4 70T2864EH3-CE6 1GB vs Kingston SMD4-S8G48HJ-26V 8GB

总分

Samsung M4 70T2864EH3-CE6 1GB

Samsung M4 70T2864EH3-CE6 1GB

总分

Kingston SMD4-S8G48HJ-26V 8GB

Kingston SMD4-S8G48HJ-26V 8GB

差异规格评论

差异

Samsung M4 70T2864EH3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864EH3-CE6 1GB

报告一个错误

低于PassMark测试中的延时，ns

67 97

左右 31% 更低的延时
更快的读取速度，GB/s

2 15.2

测试中的平均数值

Kingston SMD4-S8G48HJ-26V 8GB

需要考虑的原因
Kingston SMD4-S8G48HJ-26V 8GB

报告一个错误

更快的写入速度，GB/s

8.2 1,122.9

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864EH3-CE6 1GB

Kingston SMD4-S8G48HJ-26V 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

67 97
读取速度，GB/s

2,058.7 15.2
写入速度，GB/s

1,122.9 8.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

317 1632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4B3333C16 4GB

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A-DATA Technology DOVF1B163G2G 2GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

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Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9965589-033.D00G 8GB

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Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB