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Samsung M4 70T2864EH3-CE6 1GB
Samsung M4 70T5663QZ3-CE6 2GB
比较
Samsung M4 70T2864EH3-CE6 1GB vs Samsung M4 70T5663QZ3-CE6 2GB
总分
Samsung M4 70T2864EH3-CE6 1GB
总分
Samsung M4 70T5663QZ3-CE6 2GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2864EH3-CE6 1GB
报告一个错误
低于PassMark测试中的延时,ns
67
68
左右 1% 更低的延时
需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
2
测试中的平均数值
更快的写入速度,GB/s
1,702.6
1,122.9
测试中的平均数值
规格
完整的技术规格清单
Samsung M4 70T2864EH3-CE6 1GB
Samsung M4 70T5663QZ3-CE6 2GB
主要特点
存储器类型
DDR2
DDR2
PassMark中的延时,ns
67
68
读取速度,GB/s
2,058.7
3,886.6
写入速度,GB/s
1,122.9
1,702.6
内存带宽,mbps
5300
5300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度
5-5-5-15 / 667 MHz
5-5-5-15 / 667 MHz
排名PassMark (越多越好)
317
654
Samsung M4 70T2864EH3-CE6 1GB RAM的比较
Kingston SMD4-S8G48HJ-26V 8GB
Samsung M4 70T5663QZ3-CE6 2GB RAM的比较
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX2133C13S4/16G 16GB
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Crucial Technology CT4G4SFS8213.C8FBR2 4GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology TEAMGROUP-UD4-2133 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston KVR26N19D8/16 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston XF875V-HYA 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2L3000C15 8GB
报告一个错误
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Bug description
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